Thin dielectric layer on a substrate

Details Thin dielectric layer on a substrate Thin dielectric layer on a substrate

1991-04-16

1992-08-18

Robinson, Ellis P.

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Physical dimension specified

428446, 428450, 428702, 427 38, 357 2315, 437 24, B32B 1706, H01L 21265

Patent

active

051398699

ABSTRACT:
Disclosed is a thin dielectric inorganic layer overlaying a substrate, and having a thickness of .ltoreq. about 20 nm and a defect density of .ltoreq. about 0.6 defects/cm.sup.2 determined by BV measurements.
Also disclosed is a method of forming such a layer, according to which a layer having the desired composition and thickness is formed on a substrate, followed by an ion implantation into the substrate through the layer with a dose of .gtoreq. about 10.sup.15 ions/cm.sup.2 and a subsequent anneal at a temperature of .gtoreq. about 500.degree. C. for a predetermined time.

REFERENCES:
patent: 3540925 (1970-11-01), Athans et al.
patent: 3852120 (1974-12-01), Johnson et al.
patent: 4001049 (1977-01-01), Baglin et al.
patent: 4266985 (1981-05-01), Ito et al.
patent: 4701422 (1987-10-01), Elliot
patent: 4759993 (1988-07-01), Pai et al.
patent: 4851370 (1989-07-01), Doklan et al.
patent: 4996081 (1991-02-01), Ellul et al.
Cass, T. R., "Anomalous Residual Damage in Si After Annealing Through-Oxide Arsenic Implantations" Apl. Phys. Lett., vol. 23, Sep. 1, 1973, pp. 268-270.
Fowler et al., "MOSFET Devices with High-Gate Dielectric Integrity", I.B.M. Tech. Discl. Bull., vol. 17, No. 3, Jun. 1974, p. 270.
Vromen, B. H., "Ion Implantation Into and Through Silicon Dioxide; Its Influence on Oxide Integrity", Electrochem. Soc. Fall Mtg., Extended Abstracts, vol. 75-2, Abstract 133 (Oct. 5-10, 1975) pp. 341-342.
Vromen, B. H., "Electron Trapping and Dielectric-Strength Enhancement in Radiation-Damaged Silicon Dioxide", Extended Abstracts, vol. 77-2, Abstract No. 215 (Oct. 1977) pp. 563-565.
Irene, E. A., "Methods To Reduce Defects in Very Thin SiO.sub.2 Films", IBM Tech. Discl. Bull., vol. 21, No. 1 (Jun. 1978) pp. 1978-1979.
Briska, M., et al., "Reduction of Charge in Silicon Dioxide Layers by Use of Chlorine Ion Implantation", IBM Tech. Discl. Bull., vol. 23, No. 7A (Dec. 1980), p. 2768.
Osburn, C. M., et al., "Edge Breakdown of Poly-Si Gates Over Thin Oxides During Ion Implantation", Extended Abstracts, vol. 82-2, Abstract No. 177 (Oct. 1982) p. 278.
Roberts, S., et al., "Insulator Film Stack for Very Small Area Capacitors", IBM Tech. Discl. Bull., vol. 28, No. 3, (Aug. 1985 ) pp. 1361-1362.
Lee, J. et al., "Statistical Modeling of Silicon Dioxide Reliability", IEEE 26th Annual Proceedings, Reliability Physics, Monteray, Calif. (Apr. 12-14, 1988) pp. 131-138.

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