Thin coatings for use in semiconductor integrated circuits and p

Fishing – trapping – and vermin destroying

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437200, 437225, 148DIG137, 148DIG147, 430275, 430276, 430311, 430313, H01L 2100, H01L 2102, H01L 2188

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active

051067862

ABSTRACT:
An antireflection coating (21) for use in integrated circuit processing consists of a film of tungsten silicide (WSi.sub.0.45) or tungsten silicon nitride (WSiN). These coatings are preferably made by sputtering, with the tungsten silicon nitride coating being made by sputtering in a nitrogen-containing atmosphere.

REFERENCES:
patent: 4398341 (1963-08-01), Geipel, Jr. et al.
patent: 4640001 (1987-02-01), Koiwai et al.
patent: 4820611 (1989-04-01), Arnold, III et al.
"Fundamentals of Sputtering", by A. J. Aronson, Microelectronic Manufacturing and Testing, Jan. 1987, Part I pp. 22-23, Part II. pp. 27-28.
"Antireflection Coatings on Metal Layers for Photolithographic Purposes", by H. A. M. van den Berg et al., Journal of Applied Physics, vol. 50, No. 3, Mar. 1979, pp. 1212-1214.
"Sputtered Metallizations for Hybrid Devices", by R. P. Maniscalco et al., Hybrid Circuit Technology, Sep. 1984, pp. 19-23.
"Reactive Sputter Deposition: A Quantitative Analysis", by D. K. Hohne et al., Thin Solid Films, Elsevier Sequoia, vol. 118, (1984), pp. 301-310.

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