Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – With non-planar semiconductor surface
Reexamination Certificate
2011-06-28
2011-06-28
Dang, Trung (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Bipolar transistor structure
With non-planar semiconductor surface
C257SE29182
Reexamination Certificate
active
07968971
ABSTRACT:
A thin-body bipolar device includes: a semiconductor substrate, a semiconductor fin constructed over the semiconductor substrate, a first region of the semiconductor fin having a first conductivity type, the first region serving as a base of the thin-body bipolar device, and a second and third region of the semiconductor fin having a second conductivity type opposite to the first conductivity type, the second and third region being both juxtaposed with and separated by the first region, the second and third region serving as an emitter and collector of the thin-body bipolar device, respectively.
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Chung Shine
Hsueh Fu-Lung
Dang Trung
K&L Gates LLP
Taiwan Semiconductor Manufacturing Co. Ltd.
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