Electricity: measuring and testing – Determining nonelectric properties by measuring electric... – Semiconductors for nonelectrical property
Patent
1983-06-10
1986-05-13
Eisenzopf, Reinhard J.
Electricity: measuring and testing
Determining nonelectric properties by measuring electric...
Semiconductors for nonelectrical property
204298, G01N 2707, C23C 1452
Patent
active
045889422
ABSTRACT:
In a thickness monitoring system for use in monitoring a thickness of a desired layer to be deposited on a substrate placed on a first electrode member in a hollow space, a quartz crystal is intermittently exposed to a flow of particles sputtered or otherwise traveling from a second electrode member opposite to the first electrode member. For this purpose, a shutter may be placed in front of the quartz crystal and periodically put into operation to shelter the quartz crystal from the second electrode member. When the first electrode member has a rotatable cylinder, the quartz crystal may be placed within an inside hollow space of the cylinder. At least one hole is distributed on the cylinder to allow the material flow to intermittently pass therethrough towards the quartz crystal. When the first electrode member has a rotatable disk, the quartz crystal may be placed backwardly of the disk and is exposed to the second electrode member through at least one aperture formed in the disk.
REFERENCES:
patent: 3063867 (1962-11-01), Emery, Jr.
patent: 4121537 (1978-10-01), Maruyama
patent: 4362125 (1982-12-01), Schadler
patent: 4378382 (1983-03-01), Behn
Anelva Corporation
Eisenzopf Reinhard J.
Peterkin G.
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