Thickness mode acoustic wave resonator

Electrical generator or motor structure – Non-dynamoelectric – Piezoelectric elements and devices

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310320, 310361, 333193, H01L 4108

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active

058014764

ABSTRACT:
The invention is directed to resonators and more particularly to an MMIC-compatible resonator which can be fabricated on an MMIC chip using MMIC processing techniques. The MMIC-compatible resonator has a substrate approximately 100 microns thick made of semi-insulating GaAs and/or AlGaAs. The substrate flanks an air via on which is fabricated a thin film piezoelectric semi-insulating GaAs film, comprising the piezoelectrically active element. The piezoelectrically active element is flanked either laterally or from the top to bottom thereof by a pair of electrodes which serve to excite the thickness shear or thickness extensional mode of the thin film piezoelectrically active element. There are a number of III-V and II-VI binary compounds and ternary, and other piezoelectric semiconductor alloys, which can be used for the purposes of the invention. The thin film measures approximately 5 microns or less in thickness and is thereof.

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Temperature Compensated High Coupling and High Quality Factor ZnO/SiO.sub.2 ulk Wave Resonators on High Resistance Substrates, by Shiosaki et al, IEEE Ultrasonics Symposium, 1984, pp. 405-410.
Acoustic Bulk Wave Composite Resonators, by Larkin et al, Appl. Phys. Lett 38(3), Feb. 1, 1981, pp. 125-127.

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