Thickness measuring apparatus, thickness measuring method,...

Details Thickness measuring apparatus, thickness measuring method,... Thickness measuring apparatus, thickness measuring method,...

2005-05-24

2005-05-24

Toatley, Jr., Gregory J. (Department: 2877)

Optics: measuring and testing

By light interference

For dimensional measurement

C356S630000, C356S479000

Reexamination Certificate

active

06897964

ABSTRACT:
At each measurement time, measurement light is supplied from a measurement light source11, and interference light obtained when reflected light from a semiconductor wafer W and reference light from a reference light generating section14are coupled is detected by a photodetector15. A thickness calculating section16obtains a light intensity distribution representing the correlation between the light intensity of the interference light and the reference optical path length, selects a wafer upper surface peak and wafer lower surface peak from a plurality of light intensity peaks in the light intensity distribution using a predetermined selection criterion, and calculates the thickness of the semiconductor wafer W from the optical path length difference between the light intensity peaks. With this arrangement, a thickness measuring apparatus and thickness measuring method capable of measuring the thickness of a semiconductor wafer during execution of wet etching independently of the presence of an etchant, and a wet etching apparatus and wet etching method using the thickness measuring apparatus and method are implemented.

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