Thickness control of semiconductor device layers in reactive ion

Details Thickness control of semiconductor device layers in reactive ion Thickness control of semiconductor device layers in reactive ion

1997-02-24

1999-03-16

Breneman, R. Bruce

Adhesive bonding and miscellaneous chemical manufacture

Differential fluid etching apparatus

With microwave gas energizing means

118723E, 118729, C23F 102

Patent

active

058824685

ABSTRACT:
By moving a substrate relative to a shadow mask in a reactive ion etching system, we are able to precisely tailor the thickness of critical layers. To minimize disturbing the plasma, all the mechanical components are kept below the anode. The system is highly reproducible, and can be programmed to yield arbitrary vertical profiles along one horizontal axis. Using silicon-on-insulator substrates, the resonance wavelength was modified as a function of position with better than 1 nm control in the vertical dimension. This technique should prove useful for optical devices where the thickness of the layers controls the device characteristics.

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Sandstrom, R.L. et al., Moveable-mask reactive ion etching process for thickness control in devices, Appl. Phys. Lett. 69 (15), 2163-2165, Oct. 7, 1996.

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