Superconductor technology: apparatus – material – process – High temperature devices – systems – apparatus – com- ponents,... – Superconductor layer and one semiconducting or silicon layer
Reexamination Certificate
2005-09-30
2009-11-24
Kopec, Mark (Department: 1796)
Superconductor technology: apparatus, material, process
High temperature devices, systems, apparatus, com- ponents,...
Superconductor layer and one semiconducting or silicon layer
C505S123000, C505S238000
Reexamination Certificate
active
07622424
ABSTRACT:
A method for producing a thick film includes disposing a precursor solution onto a substrate to form a precursor film. The precursor solution contains precursor components to a rare-earth/alkaline-earth-metal/transition-metal oxide including a salt of a rare earth element, a salt of an alkaline earth metal, and a salt of a transition metal in one or more solvents, wherein at least one of the salts is a fluoride-containing salt, and wherein the ratio of the transition metal to the alkaline earth metal is greater than 1.5. The precursor solution is treated to form a rare earth-alkaline earth-metal transition metal oxide superconductor film having a thickness greater than 0.8 μm. precursor solution.
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Huang Yibing
Kodenkandath Thomas
Li Xiaoping
Rupich Martin W.
Siegal Edward J.
American Superconductor Corporation
Kopec Mark
Wilmer Cutler Pickering Hale & Dorr LLP.
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