Thick single crystal diamond layer method for making it and...

Stock material or miscellaneous articles – Self-sustaining carbon mass or layer with impregnant or...

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C063S032000, C117S084000, C117S097000, C117S929000, C427S577000, C428S334000

Reexamination Certificate

active

07128974

ABSTRACT:
This invention relates to diamond and more particularly to diamond produced by chemical vapour deposition (hereinafter referred to as CVD). According to a first aspect of the invention, there is provided a layer of single crystal CVD diamond of high quality having a thickness of at least 2 mm.

REFERENCES:
patent: 5127983 (1992-07-01), Imai et al.
patent: 5302231 (1994-04-01), Bovenkerk et al.
patent: 5334283 (1994-08-01), Parikh et al.
patent: 5360479 (1994-11-01), Banholzer et al.
patent: 5387310 (1995-02-01), Shiomi et al.
patent: 5391409 (1995-02-01), Shibata et al.
patent: 5400738 (1995-03-01), Shiomi et al.
patent: 5419276 (1995-05-01), Anthony et al.
patent: 5474021 (1995-12-01), Tsuno et al.
patent: 5587210 (1996-12-01), Marchywka et al.
patent: 5614019 (1997-03-01), Vichr et al.
patent: 5672430 (1997-09-01), Lu et al.
patent: 5704976 (1998-01-01), Snail
patent: 5773830 (1998-06-01), Lu et al.
patent: 6007916 (1999-12-01), Satoh et al.
patent: 6132816 (2000-10-01), Takeuchi et al.
patent: 6582513 (2003-06-01), Linares et al.
patent: 2004/0175499 (2004-09-01), Twitchen et al.
patent: 2004/0177803 (2004-09-01), Scarsbrook et al.
patent: 2004/0180205 (2004-09-01), Scarsbrook et al.
patent: 2004/0194690 (2004-10-01), Twitchen et al.
patent: 2004/0229464 (2004-11-01), Godfried et al.
patent: 0 507 497 (1992-10-01), None
patent: 582397 (1994-02-01), None
patent: 879904 (1998-11-01), None
patent: 0 918 100 (1999-05-01), None
patent: 2-107596 (1990-04-01), None
McCauley “Homoepitaxial diamond film deposition on brilliant cut diamond anvil” Appl. Phys. Lett 66(12) Mar. 20, 1995.
Hunn et al “Fabrication of single-crystal diamond microcomponents” Appl. Phys. Lett 65 (24) Dec. 12, 1994.
Samlenski et al “Incorporation of nitrogen in chemical vapor deposition diamond” Appl. Phys. Lett 67(19) Nov. 6, 1995.
Schauer et al (Phosphorus incorporation in plasma deposited diamond films Appl. Phys. Lett 64(9) Feb. 28, 1994.
U.S. Appl. No. 10/311,215, filed Dec. 16, 2002, Scarsbrook et al.
U.S. Appl. No. 10/739,014, filed Dec. 19, 2003, Scarsbrook et al.
U.S. Appl. No. 10/739,014, filed Dec. 19, 2003, Scarsbrook et al.
U.S. Appl. No. 10/777,633, filed Feb. 13, 2004, Scarsbrook et al.
JD Hunn et al.: “Ion beam and laser-assisted micromachining of single-crystal diamond” Solid State Technology, vol. 37, No. 12, pp. 57-60 Dec. 1, 1994.
M.A. Plano et al.: Characterization of a thick homoepitaxial CVD diamond film: Diamond, SIC and Nitrice Wide Bandgap Semiconductors. Symposium, Diamond, SIC and Nitride WiDE Bandgap Semiconductors, pp. 307-312 San Francisco, CA, Apr.-Aug. 1994.
TS McCauley et al.: “Homoepitaxial diamond film deposition on a brilliant cut diamond anvil” Applied Physics Letters, vol. 66, No. 12, pp. 1486-1488 Mar. 20, 1995.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Thick single crystal diamond layer method for making it and... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Thick single crystal diamond layer method for making it and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Thick single crystal diamond layer method for making it and... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3674106

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.