Thick oxide film for wafer backside prior to metalization loop

Details Thick oxide film for wafer backside prior to metalization loop Thick oxide film for wafer backside prior to metalization loop

2007-02-22

2009-11-10

Mulpuri, Savitri (Department: 2812)

Semiconductor device manufacturing: process

Including control responsive to sensed condition

Interconnecting plural devices on semiconductor substrate

C438S692000, C438S778000, C257SE21001

Reexamination Certificate

active

07615386

ABSTRACT:
A method for reducing wafer backside large particle contamination, comprising: performing front end of line processing of a memory device, depositing a thick oxide on the wafer backside so that at least pre-selected oxide thickness remains after back end of line processing is complete and performing the back end of line processing of the memory device.

REFERENCES:
patent: 2004/0063263 (2004-04-01), Suzuki et al.

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