Thick oxide field-shield CMOS process

Details Thick oxide field-shield CMOS process Thick oxide field-shield CMOS process

1984-01-26

1986-02-18

Roy, Upendra

Metal working

Method of mechanical manufacture

Assembling or joining

29571, 29577C, 148 15, 148187, 148DIG82, 357 44, 357 51, H01L 2194, H01L 21265

Patent

active

045703310

ABSTRACT:
An improved semiconductor structure and the method for fabricating such is disclosed. The invention relates to the use of thick-oxide for improved field-shield isolation especially as applied to dynamic RAMS's and also to its integration into an improved CMOS process. The improved structure has increased isolation characteristics between adjacent memory cells and still allows for lessened spacing between cells. The corresponding process determines the spacing between cells through etching and eliminates several steps by utilizing one mask for several purposes including defining the active transistor areas and the first polysilicon layer and by extending the use of the first polysilicon layer for field-shield isolation between cells. Additional advantages are disclosed including a higher body effect in the isolation transistors, use of a nitride dielectric layer, and a higher, stable threshold voltage in the isolation transistors. Also, modification of the improved process for fabrication of P-channel and N-channel devices can be made.

REFERENCES:
patent: 4352236 (1982-10-01), McCollum
patent: 4380113 (1983-04-01), Malwah
patent: 4391032 (1983-07-01), Schulte
patent: 4411058 (1983-10-01), Chen
patent: 4414058 (1983-11-01), Mueller
patent: 4441246 (1984-04-01), Redwine
patent: 4466177 (1984-08-01), Chao
patent: 4506436 (1985-03-01), Bakeman, Jr. et al.
patent: 4507159 (1985-03-01), Erb

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