Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead
Reexamination Certificate
2005-12-20
2005-12-20
Pham, Long (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
C257S778000, C257S758000
Reexamination Certificate
active
06977435
ABSTRACT:
A process flow to make an interconnect structure with one or more thick metal layers under Controlled Collapse Chip Connection (C4) bumps at a die or wafer level. The interconnect structure may be used in a backend interconnect of a microprocessor. The one or more integrated thick metal layers may improve power delivery and reduce mechanical stress to a die at a die/package interface.
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Ayers Dave
George, legal representative Anna M.
Kim Sarah E.
List R. Scott
Martell Bob
Fish & Richardson P.C.
Intel Corporation
Le Thao X.
Pham Long
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