Thick, low-stress films, and coated substrates formed therefrom,

Details Thick, low-stress films, and coated substrates formed therefrom, Thick, low-stress films, and coated substrates formed therefrom,

1989-11-28

1992-10-20

Thibodeau, Paul J.

Stock material or miscellaneous articles

Web or sheet containing structurally defined element or...

Physical dimension specified

428336, 428688, 428689, 428698, 428704, B32B 516

Patent

active

051569094

ABSTRACT:
Stress-induced deformation, and the damage resulting therefrom, increases with film thickness. The overcoming of excessive stress by the use of the Si-Al-N film material of the present invention, permits the formation of thick films that are necessary for certain of the above described applications. The most likely use for the subject film materials, other than their specialized views as an optical film, is for microelectronic packaging of components on silicon substrates.
In general, the subject films have excellent adherence to the underlying substrate, a high degree of hardness and durability, and are excellent insulators. Prior art elevated temperature deposition processes cannot meet the microelectronic packaging temperature formation constraints. The process of the present invention is conducted under non-elevated temperature conditions, typically 500.degree. C. or less.

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