Thick film dielectric compositions for use on aluminum...

Details Thick film dielectric compositions for use on aluminum... Thick film dielectric compositions for use on aluminum...

2006-04-18

2006-04-18

Group, Karl (Department: 1755)

Compositions: ceramic

Ceramic compositions

Glass compositions, compositions containing glass other than...

C501S070000, C501S073000, C501S017000, C501S018000, C501S020000, C501S032000, C428S210000, C428S426000

Reexamination Certificate

active

07030048

ABSTRACT:
present invention relates to a Cd-free and Pb-free glass composition comprising, based in mol %, 1–10% MO where M is selected from Ba, Sr, Ca and mixtures thereof, 5–30% MgO, 0.3–5% CuO, 0–2.5% P2O5, 0–2.5% ZrO2, 24–45% ZnO, 2–10% Al2O3, 35–50% SiO2and 0.1–3% A2O where A is selected from the group of alkali elements and mixtures thereof wherein the glass composition is useful in thick paste dielectric materials which are compatible with AlN substrates.

REFERENCES:
patent: 4808673 (1989-02-01), Hang et al.
patent: 4830988 (1989-05-01), Hang et al.
patent: 5089172 (1992-02-01), Allison et al.
patent: 5165986 (1992-11-01), Gardner et al.
patent: 5298330 (1994-03-01), Stadnicar, Jr. et al.
patent: 5393558 (1995-02-01), Allison et al.
patent: 5397830 (1995-03-01), Shaikh et al.
patent: 6391809 (2002-05-01), Young
patent: 2002/0030573 (2002-03-01), Mori et al.
Thick film dielectrics on AIN (aluminum nitride) substrates, Dec. 2, 2002, pp 3-29.

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