Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state
Reexamination Certificate
2011-03-29
2011-03-29
Kunemund, Robert M (Department: 1714)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
C117S088000, C117S090000, C117S092000, C117S094000, C117S095000
Reexamination Certificate
active
07914619
ABSTRACT:
The invention provides a high temperature (about 1150° C. or greater) annealing process for converting thick polycrystalline Si layers on the order of 1 μm to 40 μm on a single crystal seed layer into thick single crystal Si layers having the orientation of the seed layer, thus allowing production of thick Si films having the quality of single crystal silicon at high rates and low cost of processing. Methods of integrating such high temperature processing into solar cell fabrication are described, with particular attention to process flows in which the seed layer is disposed on a porous silicon release layer. Another aspect pertains to the use of similar high temperature anneals for poly-Si grain growth and grain boundary passivation. A further aspect relates to structures in which these thick single crystal Si films and passivated poly-Si films are incorporated.
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de Souza Joel P.
Fogel Keith E.
Inns Daniel A.
Sadana Devendra K.
Saenger Katherine L.
International Business Machines - Corporation
Kunemund Robert M
Percello, Esq. Louis J.
Scully , Scott, Murphy & Presser, P.C.
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