Theta device with improved base contact

Details Theta device with improved base contact Theta device with improved base contact

1987-04-27

1989-05-23

Sikes, William L.

357 16, 357 12, 357 4, H01L 2972

Patent

active

048335177

ABSTRACT:
A vertical ballistic transistor is described. Base metallic contacts of reliable thickness are deposited on a carrier depletable layer and diffuse into the base. A depletion region forms in the depletable layer. The depletion region electrically isolates the base contact from the emitter. The thickness of the depletable layer prevents the generation of usual depletion regions in the base that tend to cut off base current.

REFERENCES:
patent: 4586071 (1986-04-01), Tiwari
patent: 4691215 (1987-09-01), Luryi
IBM Technical Disclosure Bulletin, vol. 19 #5 pp. 2235-2236 Oct. 1986.

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