Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Thermally responsive
Reexamination Certificate
2007-10-16
2007-10-16
Smoot, Stephen W. (Department: 2813)
Semiconductor device manufacturing: process
Making device or circuit responsive to nonelectrical signal
Thermally responsive
C438S488000, C438S509000, C257S467000
Reexamination Certificate
active
10532825
ABSTRACT:
The present invention provides an SiGe-based thin film, a method for manufacturing this thin film, and applications of this thin film. The present invention relates to a method for producing, by sputtering, an SiGe-based semiconductor thin film to serve as a member of a thermoelectric transducing material component that is a constituent element of a sensor device whose signal source is a temperature differential and that transduces a local temperature differential into an electric signal, wherein the SiGe-based thin film is produced by heat treating a SiGe-based semiconductor thin film material after sputtering vaporization; to the above-mentioned method for forming a thin film wherein the substrate temperature and/or the plasma output is raised in the formation of the SiGe-based semiconductor thin film by sputtering vaporization, to form a thin film with a more highly crystallized structure; to an SiGe-based thin film produced by the above-mentioned method, which serves as a member of a thermoelectric transducing material component that is a constituent element of a sensor device whose signal source is a temperature differential and that transduces a local temperature differential into an electric signal, and which has been endowed with good thermoelectric characteristics by heat treatment; and to a gas sensor device containing as a constituent element the above-mentioned SiGe-based thin film.
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Izu Noriya
Matsubara Ichiro
Murayama Norimitsu
Qiu Fabin
Shin Woosuck
National Institute of Advanced Industrial Science and Technology
Smoot Stephen W.
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