Thermoelectric semiconductor material

Details Thermoelectric semiconductor material Thermoelectric semiconductor material

1994-08-02

1996-08-20

Bonner, Melissa

Compositions

Barrier layer device compositions

Group iii element containing binary compound; e.g., ga, as

252512, 252519, 136239, 428620, 428628, 428641, C22C 3802, C22C 3810

Patent

active

055475981

ABSTRACT:
A thermoelectric semiconductor material comprises Si crystal and crystal of metal silicide selected from the group consisting of Fe, Co, Cr, Mn and Ni. It is preferable that the metal silicide is .beta.-FeSi.sub.2. Moreover, the thermoelectric semiconductor material further contains at least one element selected from the group consisting of Vb, VIb, IIIb, VIII, VIIa and VIa in the atomic periodic table as an additive. This element can be used as a dopant. Furthermore, since both the phase of the Si crystal and the phase of the crystal of the metal silicide are changed to be an n-type or a p-type, a thermoelectric characteristics are improved.

REFERENCES:
patent: 3854940 (1974-12-01), Hoekje
patent: 4539054 (1985-09-01), Morimoto et al.
patent: 4755256 (1988-07-01), Ditchek
patent: 4912542 (1990-03-01), Suguro
"Temperature Dependence of Semiconducting and structural properties of Cr-Si thin films", J. Appl. Phys. 57 (6), 15 Mar. 1985 pp. 2018-2025.

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