Thermoelectric semiconductor having a sintered semiconductor lay

Details Thermoelectric semiconductor having a sintered semiconductor lay Thermoelectric semiconductor having a sintered semiconductor lay

1997-07-28

1999-09-28

Hardy, David B.

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Temperature

136203, 257930, H02L 31058

Patent

active

059593415

ABSTRACT:
A thermoelectric semiconductor is formed of a sintered semiconductor layer nd metal layers arranged on sides of opposite end faces of the sintered semiconductor layer. These metal layers are to inhibit a reaction between the sintered semiconductor layer and older layers through which electrodes are joined to the sintered semiconductor layer. The sintered semiconductor layer and the metal layers have been obtained beforehand by integrally sintering a semiconductor powder layer and metal sheets arranged on sides of opposite end faces of the semiconductor powder layer.

REFERENCES:
patent: 4855810 (1989-08-01), Gelb et al.
patent: 5429680 (1995-07-01), Fuschetti
patent: 5439528 (1995-08-01), Miller
patent: 5441576 (1995-08-01), Bierschenk et al.
patent: 5817188 (1998-10-01), Yahatz et al.

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