Thermoelectric refrigeration material and method of making the s

Details Thermoelectric refrigeration material and method of making the s Thermoelectric refrigeration material and method of making the s

1992-03-18

1994-03-08

Walsh, Donald P.

Batteries: thermoelectric and photoelectric

Thermoelectric

Having particular thermoelectric composition

136201, 136203, 136240, H01L 3514, H01L 3520

Patent

active

052923762

ABSTRACT:
In a thermoelectric refrigeration material with thermoelectric conversion characteristic, in order to improve crystallinity of a system of bismuth-antimony (Bi-Sb) and thereby to improve the figure of merit Z, bismuth (Bi), antimony (Sb) and silicon monoxide (SiO) are deposited on a substrate at a predetermined rate in a thermally nonequilibrium state by an ICB method so that a thin film crystal having a granular structure including crystal grains of around one micron is obtained. Consequently, the figure of merit Z can be improved by selectively varying the thermal conductivity K which largely depends upon the crystallinity and which is one of elements of the figure of merit Z determining the thermal conversion coefficiency.

REFERENCES:
patent: 3090207 (1963-05-01), Smith et al.
patent: 3136134 (1964-06-01), Smith
patent: 3481796 (1969-12-01), Brown
patent: 4500742 (1985-02-01), Morimoto et al.

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