Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate
2006-05-02
2006-05-02
Soward, Ida M. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
C257S009000, C257S016000, C257S017000, C257S018000, C257S019000, C257S020000, C257S021000, C257S022000, C257S028000, C257S110000, C257S120000, C257S548000, C257S930000
Reexamination Certificate
active
07038234
ABSTRACT:
A super-lattice thermoelectric device. The device includes p-legs and n-legs, each leg having a large number of alternating layers of two materials with differing electron band gaps. The n-legs in the device are comprised of alternating layers of silicon and silicon germanium. The p-legs includes alternating layers of B4C and B9C. In preferred embodiments the layers are about 100 angstroms thick. Applicants have fabricated and tested a first Si/SiGe (n-leg) and B4C/B9C (p-leg) quantum well thermocouple. Each leg was only 11 microns thick on a 5 micron Si substrate. Nevertheless, in actual tests the thermocouple operated with an amazing efficiency of 14 percent with a Thof 250 degrees C. Thermoelectric modules made according to the present invention are useful for both cooling applications as well as electric power generation. This preferred embodiment is a thermoelectric 10×10 egg crate type module about 6 cm×6 cm×0.76 cm designed to produce 70 Watts with a temperature difference of 300 degrees C with a module efficiency of about 30 percent.
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Bass John C.
Elsner Norbert B.
Ghamaty Saeid
Hi-Z Technology, Inc.
Ross John R.
Ross, III John R.
Soward Ida M.
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