Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate
2011-01-18
2011-01-18
Mandala, Victor A (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
C257S432000, C257SE29168, C257SE21090, C257SE31033, C257SE29322, C136S239000, C250S226000, C438S478000
Reexamination Certificate
active
07872253
ABSTRACT:
A thermoelectric conversion material includes a superlattice structure produced by laminating a barrier layer containing insulating SrTiO3, and a quantum well layer containing SrTiO3which has been converted into a semiconductor by doping an n-type impurity therein. The quantum well layer has a thickness 4 times or less the unit lattice thickness of SrTiO3which has been converted into a semiconductor by doping an n-type impurity therein.
REFERENCES:
patent: 07-082097 (1995-03-01), None
patent: 08-222775 (1996-08-01), None
patent: 08-231223 (1996-09-01), None
patent: 10-032353 (1998-02-01), None
patent: 2003-257709 (2003-09-01), None
patent: 2004-193200 (2004-07-01), None
patent: 2004-363576 (2004-12-01), None
L. D. Hicks et al., “Effect of quantum-well structures on the thermoelectric figure of merit,” Phys. Rev. vol. 47, No. 19, B47, May 15, 1993, pp. 12727-12731.
M. S. Dresselhaus et al., “Low Dimensional Thermoelectrics,” Proceedings of the 16th International Conference on Thermoelectrics, 1997, pp. 12-19.
Venkatasubramanian, R. et al., “Thin-film thermoelectric devices with high room-temperature figures of merit,” Nature 413, Oct. 11, 2001, pp. 597-602.
Harman, T. C. et al., “Quantum dot superlattice thermoelectric materials and devices,” Science 297, Sep. 27, 2002, pp. 2229-2232.
Hsu, K. F. et al., “Cubic AgPbmSbTe2+m: Bulk thermoelectric materials with high figure of merit,” Science 303, Feb. 6, 2004, pp. 818-821.
Ohta, S. et al., “Large thermoelectric performance of heavily Nb-doped SrTiO3epitaxial film at high temperature,” Appl. Phys. Lett. 87, 2005, pp. 092108-1-092108-3.
Keisuke Shibuya et al. “Single crystal SrTiO3field-effect transistor with an atomically flat amorphous CaHfO3gate insulator,” Applied Physics Letters, vol. 85 No. 3, Jul. 19, 2004, pp. 425-427.
Terasaki, I. et al., “Large thermoelectric power in NaCo2O4single crystals,” Phys. Rev. B56, Nov. 15, 1997, pp. 12685-12687.
Funahashi, R. et al., “An Oxide Single Crystal with High Thermoelectric performance in Air,” Jpn. J. Appl. Phys. vol. 39, Nov. 15, 2000, L1127-L1129.
International Search Report mailed Aug. 14, 2007, issued on PCT/JP2007/059766.
Koumoto Kunihito
Mune Yoriko
Ohta Hiromichi
Edwards Angell Palmer & & Dodge LLP
Mandala Victor A
Moore Whitney
National University Corporation Nagoya University
LandOfFree
Thermoelectric material, infrared sensor and image forming... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Thermoelectric material, infrared sensor and image forming..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Thermoelectric material, infrared sensor and image forming... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2715593