Thermoelectric material and thermoelectric module using the...

Batteries: thermoelectric and photoelectric – Thermoelectric – Having particular thermoelectric composition

Reexamination Certificate

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C136S236100, C136S240000

Reexamination Certificate

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07663054

ABSTRACT:
Disclosed is a thermoelectric material comprising a main phase which is represented by the following composition formula and having an MgAgAs-type crystalline structure:in-line-formulae description="In-line Formulae" end="lead"?(Ta1Zrb1Hfc1)xCoySb100-x-yin-line-formulae description="In-line Formulae" end="tail"?wherein 0<a1<1, 0<b1<1, 0<c1<1, a1+b1+c1=1, 30≦x ≦35, and 30≦y≦35.

REFERENCES:
patent: 2003/0084935 (2003-05-01), Bell
patent: 2003/0154725 (2003-08-01), McGrew
patent: 2004/0112418 (2004-06-01), Yang et al.
patent: 2005/0172994 (2005-08-01), Shutoh et al.
Poon et al. “Bandgap Features and Thermoelectric Properties of Ti-Based Half-Heusler Alloys” IEEE, 18th International Conference on Thermoelectrics, 1999, pp. 45-51.
Hohl et al. “Efficient Dopants for ZrNiSn-based thermoelectric materials” J.Phys.: Condens. Matter, 11, 1999, pp. 1697-1709.
S. Sportouch, et al., “Thermoelectric Properties of Half-Heusler Phases: ErNi1-xCuxSb1YNi1-xCuxSb and ZrxHfyTizNiSn” IEEE, 18thInternational Conference on Thermoelectrics, 1999, pp. 344-347.
Y. Xia, et al., “Thermoelectric Properties of Semimetallic (Zr, Hf)CoSb Half-Heusler Phases”, Journal of Applied Physics, vol. 88, No. 4, Aug. 15, 2000, pp. 1952-1955.

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