Batteries: thermoelectric and photoelectric – Thermoelectric – Having particular thermoelectric composition
Reexamination Certificate
2003-07-30
2011-11-29
Phasge, Arun S (Department: 1724)
Batteries: thermoelectric and photoelectric
Thermoelectric
Having particular thermoelectric composition
C136S236100, C136S240000
Reexamination Certificate
active
08067686
ABSTRACT:
Disclosed is a thermoelectric material which is represented by the following composition formula (1) or (2) and comprises as a major phase an MgAgAs type crystal structure:in-line-formulae description="In-line Formulae" end="lead"?(Tia1Zrb1Hfc1)xNiySn100-x-y composition formula (1);in-line-formulae description="In-line Formulae" end="tail"?in-line-formulae description="In-line Formulae" end="lead"?(Lnd(Tia2Zrb2Hfc2)1-d)xNiySn100-x-y composition formula (2);in-line-formulae description="In-line Formulae" end="tail"?(wherein a1, b1, c1, x and y satisfy the conditions of: 0<a1<1, 0<b1<1, 0<c1<1, a1+b1+c1=1, 30≦x≦35 and 30≦y≦35, and Ln is at least one element selected from the group consisting of Y and rare earth elements, and a2, b2, c2 and d satisfy the conditions of: 0≦a2≦1, 0≦b2≦1, 0≦c2≦1, a2+b2+c2=1 and 0<d≦0.3).
REFERENCES:
patent: 6700052 (2004-03-01), Bell
patent: 2001-189495 (2001-07-01), None
patent: 2002-33527 (2002-01-01), None
Shen, Q., Zhang, L. M., Chen, L. D., Goto, T. and Hirai, T., Synthesis and Sintering of ZrNiSn Thermoelectric Compounds, 21st International Conference on Thermoelectrics, Aug. 25-29, 2002, pp. 166-169.
H. Hohl, et al., J. Phys.: Condens., matter 11, pp. 1697-1709, “Efficient Dopants for ZrNiSn-Based Thermoelectric Materials”, 1999.
K. Mastronardi, et al., Applied Physics Letters, vol. 74, No. 10, pp. 1415-1417, “Antimonides With the Half-Heusler Structure: New Thermoelectric Materials”, Mar. 8, 1999.
U.S. Appl. No. 10/105,341, filed Mar. 26, 2002, Shutoh et al.
U.S. Appl. No. 10/958,376, filed Oct. 6, 2004, Shutoh et al.
S. Sportouch, et al., “Thermoelectric Properties of Half-Heusler Phases:ErNi-1-x,CuxSb, YNi-xCuxSb and ZrxHfyTizNiSn”, 18thInternational Conference on Thermoelectrics Proceedings, ICT' 99, Aug. 1999, pp. 344-347.
S. J. Poon, et al., “Bandgap Features and Thermoelectric Properties of Ti-Based Half-Heusler Alloys” 18thInternational Conferences on Thermoelectrics Proceedings, ICT' 99, Aug. 1999, pp. 45-51.
C. Uher, et al., “Thermoelectric Properties of Bi-Doped Half-Heusler Alloys”, 18thInternational Conference on Thermoelectrics Proceedings, ICT' 99, Aug. 1999, pp. 56-59.
S. Bhattacharya, et al., “Thermoelectric Properties of Sb-Doping in the TiNiSn1xSbxHalf-Heusler System”, 18thInternational Conference on Thermoelectrics Proceedings, ICT' 99, Aug. 1999, pp. 336-339.
Y. Xia, et al., “Thermoelectric Properties of semimetallic (Zr, Hf)CoSb half-Heusler phases”, Journal of Applied Physics, vol. 88, No. 4, Aug. 15, 2000, pp. 1952-1955.
S. Bhattacharya, et al., “Effect of Sb doping on the thermoelectric properties of Ti-based half-Heusler compounds, TiNiSn1-xSbx”; Applied Physics Letters, vol. 77, No. 16, Oct. 16, 2000, pp. 2476-2478.
Q. Shen, et al., “Effects of partial substitution of Ni by Pd on the thermoelectric properties of ZrNiSn-based half-Heusler compounds”, Applied Physics Letters, vol. 79, No. 25, Dec. 17, 2001, pp. 4165-4167.
Qiang Shen, et al., “Thermoelectric Properties of ZrNiSn-based half-Heusler compounds by solid state reaction method”, Journal of Materials Science Letters, vol. 20, No. 24, Dec. 2001, pp. 2197-2199.
S. Joseph Poon, et al., “Electronic and Thermoelectric Properties of Half-Heusler Alloys”, Semiconductors and Semimetals, Academic Press, vol. 70, 2001, pp. 37-75.
Shen Qiang, et al., Synthesis and Thermoelectric Properties of ZrNiSn-based Semi-Heusler Compounds, Preprints of Annual Meeting of the Ceramic Society of Japan, Mar. 21, 2001, p. 285.
Kondo Naruhito
Sakurada Shinya
Shutoh Naoki
Takezawa Nobuhisa
Kabushiki Kaisha Toshiba
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
Phasge Arun S
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