Batteries: thermoelectric and photoelectric – Thermoelectric – Having particular thermoelectric composition
Reexamination Certificate
2005-03-24
2010-06-29
Neckel, Alexa D (Department: 1795)
Batteries: thermoelectric and photoelectric
Thermoelectric
Having particular thermoelectric composition
C136S238000, C136S239000, C136S240000, C136S203000, C136S205000, C252S519120
Reexamination Certificate
active
07745720
ABSTRACT:
A thermoelectric material includes a composition represented by the following formula (A):in-line-formulae description="In-line Formulae" end="lead"?(Tia1Zrb1Hfc1)xNiySn100-x-y (A)in-line-formulae description="In-line Formulae" end="tail"?where 0<a1<1, 0<b1<1, 0<c1<1, a1+b1+c1=1, 30≦x≦35, and 30≦y≦35. The composition includes at least two MgAgAs crystal phases different in a lattice constant, and, assuming that X-ray diffraction peak intensity from a (422) diffraction plane of a first MgAgAs crystal phase having a smallest lattice constant and X-ray diffraction peak intensity from a (422) diffraction plane of a second MgAgAs crystal phase having a largest lattice constant be I1and I2, respectively, a value of I1/(I1+I2) is in a range of 0.2 to 0.8.
REFERENCES:
patent: 5929351 (1999-07-01), Kusakabe et al.
patent: 2003/0084935 (2003-05-01), Bell
patent: 2004/0112418 (2004-06-01), Yang et al.
patent: 2004/0261833 (2004-12-01), Ono et al.
patent: 2005/0139251 (2005-06-01), Shutoh et al.
patent: 2005/0172994 (2005-08-01), Shutoh et al.
patent: 2004-356607 (2004-12-01), None
Hohl et al., “Efficient dopants for ZrNiSn-based thermoelectric materials”, vol. 11, No. 7, 1999 , pp. 1697-1709(13).
Poon et al. “Bandgap Features and Thermoelectric Properties of Ti-Based Half-Heusler Alloys” IEEE, 18th International Conference on Thermoelectrics, 1999, pp. 45-51.
Sportouch et al, “Thermoelectric Properties of Half-Heusler Phases: ErNi1-xSb, YNi1-xCuxSb, and ZrxHfyTizNiSn”, 18thInternational Conference on Thermoelectrics, 1999, pp. 344-347.
U.S. Appl. No. 10/958,376, filed Jun. 30, 2005.
U.S. Appl. No. 10/629,624, filed Aug. 11, 2005.
Japanese Office Action and English Translation mailed Nov. 10, 2009.
Hirono Shinsuke
Sakurada Shinya
Shutoh Naoki
Kabushiki Kaisha Toshiba
Mowla Golam
Neckel Alexa D
Nixon & Vanderhye P.C.
Toshiba Materials Co., Ltd.
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