Thermoelectric material and method of manufacturing the same

Details Thermoelectric material and method of manufacturing the same Thermoelectric material and method of manufacturing the same

2005-02-22

2005-02-22

Kopec, Mark (Department: 1751)

Compositions

Barrier layer device compositions

Organic

C252S500000, C252S518100, C252S519400, C136S236100, C136S201000, C257S930000, C428S357000, C428S432000, C428S699000

Reexamination Certificate

active

06858154

ABSTRACT:
A thermoelectric material having large thermoelectric figure of merit is provided. A thin film comprising nanometer-sized particles having their diameters distributing within the range of 0.5 nm though 100 nm both inclusive is formed by depositing the nanometer-sized particles on a substrate, or dispersing the particles in a solid matrix material or solution thereby to form a thin film. In the thin film, a band gap due to quantum confinement effect is generated in each of the particles and electrical conduction occurs by that at least a part of the particles supply carriers. Accordingly, thermal conductivity κ as well as electrical resistivity ρ and Seebeck coefficient S all of which are factors of thermoelectric figure of merit can be independently controlled, and it is possible to get a thermoelectric material having large dimensionless thermoelectric figure of merit ZT such as beyond 1.5.

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