Thermoelectric cooling device

Refrigeration – Using electrical or magnetic effect – Thermoelectric; e.g. – peltier effect

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136239, H01L 2328

Patent

active

052750019

ABSTRACT:
A thermoelectric semiconductor element is disclosed which is particularly low in toxicity and inexpensive. The element is mainly composed of a complex oxide comprising strontium and titanium. An oxide semiconductor possessing oxygen deficiency is used as the n-type element. According to the invention, as compared with a thermoelectric semiconductor element for thermoelectric cooling using a conventional Bi-Te thermoelectric semiconductor which is particularly toxic due to addition of Se or the like, the toxicity of the n-type semiconductor element part is lowered, and a thermoelectric semiconductor element excellent in performance is obtained.

REFERENCES:
patent: 3294688 (1966-12-01), Precht
patent: 3615870 (1971-10-01), Crouthamel
patent: 3775843 (1973-12-01), Wendt
patent: 5168339 (1992-12-01), Yokotani et al.
Macklin et al., "On The Use of Oxides for Thermoelectric Refrigeration", Materials Science and Engineering B7(1990) 111-117.
Frederikse, et al., "Electronic Transport in Strontium Titanate", Physical Review, vol. 134, Number 2A, Apr. 20, 1964, pp. A442-A445.
Berglund, et al., "Electron Transport in Single-Domain, Ferroelectric Barium Titanate", Physical Review, vol. 157, Number 2, May 10, 1967, pp. 358-367.

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