Thermo-sensitive switching element manufacturing method

Details Thermo-sensitive switching element manufacturing method Thermo-sensitive switching element manufacturing method

1980-08-06

1982-10-12

Rutledge, L. Dewayne

Metal treatment

Compositions

Heat treating

29573, 29576B, 357 28, 357 91, H01L 21265, H01L 2356

Patent

active

043537545

ABSTRACT:
A thermo-sensitive semiconductor element having a four-layer pnpn structure. A defect layer is formed at the junction of the p base layer and the n base layer by implantation of argon ions to provide a semiconductor element having a desired thermo-sensitive characteristic. The element is subjected to heat treatment such as annealing at temperatures in a range of from 400.degree. C. to 900.degree. C. in a nitrogen atmosphere after the argon ion implantation so that the leakage current into the element having the defect layer is controlled.

REFERENCES:
patent: 3925106 (1975-12-01), Ku et al.
patent: 4151011 (1979-04-01), Mihashi et al.

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