Thermionic emission type static induction transistor and its int

Details Thermionic emission type static induction transistor and its int Thermionic emission type static induction transistor and its int

1990-01-24

1992-05-26

Hille, Rolf

357 16, H01L 2980

Patent

active

051172682

ABSTRACT:
In a static induction transistor of thermionic emission type, its gate region is formed of a semiconductor having a forbidden band gap larger than that of a semiconductor forming its channel region, and the distance between a source region and the intrinsic gate region is selected to be smaller than the mean free path of carriers so as to permit the thermionic emission. Such a vertical structure transistor is also applied to an integrated circuit.

REFERENCES:
patent: 4326209 (1982-04-01), Nishizawa et al.
patent: 4470059 (1984-09-01), Nishizawa et al.
patent: 4484207 (1984-11-01), Nishizawa et al.
patent: 4504847 (1985-03-01), Nishizawa
patent: 4712122 (1987-12-01), Nishizawa et al.
patent: 4870469 (1989-09-01), Nishizawa et al.

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