Thermally uniform transistor

Details Thermally uniform transistor Thermally uniform transistor

1995-06-07

1997-04-01

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Temperature

257467, 257287, 257582, 437912, 437909, H01L 2970, H01L 29772

Patent

active

056169507

ABSTRACT:
Generally, and in one form of the invention, a method for fabricating a transistor having a plurality of active regions comprising spacing or shaping the emitters 20 and 22, or gates, in a non-uniform manner to provide a substantially constant temperature over an active region of the transistor is disclosed. An advantage of the invention is that the occurrence of a thermal runaway condition between transistor current and temperature is generally avoided.

REFERENCES:
patent: 3309585 (1967-03-01), Forrest
patent: 3704398 (1972-11-01), Fukino
patent: 4939562 (1990-07-01), Alderstein
patent: 5057882 (1991-10-01), Pritchett
Gao, et al., "Uniform Junction Temperature AlGaAs/GaAs Power Eterojunction Bipolar Transistors on Silison Substrates", Appl. Phys. Lett. 58 (10), 11 Mar. 91, pp. 1068-1070.
Gao, et al., "Thermal Design Studies of High-Power Heterojunction Bipolar Transistors", IEEE Transactions on Electron Devices, vol. 36, No. 5., May 1989, pp. 854-863.

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