Patent
1990-12-12
1991-10-01
Jackson, Jr., Jerome
357 4, 357 16, 357 22, 357 15, H01L 29205, H01L 2714, H01L 3106
Patent
active
050538438
ABSTRACT:
An IMSM photodetector structure comprises a GaAs substrate, a buffer region grown on the substrate, an optically active absorbing layer of In.sub.0.42 Ga.sub.0.58 As grown on the absorbing layer. The buffer region includes in sequence a first layer of In.sub.0.23 Ga.sub.0.77 As, an In.sub.0.46 Ga.sub.0.54 As/GaAs superlattice, and a second layer of In.sub.0.23 Ga.sub.0.77 As. An interdigitated pattern of Schottky metal contacts is fabricated on the Al.sub.0.3 Ga.sub.0.7 As/GaAs superlattice. This structure is useful in fabricating long-wavelength, monolithic receivers based on GaAs MESFET technology since the optical and electrical characteristics of the structure are preserved during the thermal annealing cycle necesary in ion-implaned GaAs MESFET processes.
REFERENCES:
Hong et al., IEEE Trans. on Elec. Dev., vol. 36, No. 4, Apr. 89, pp. 659-662, "High-Performance . . . OMCVD".
Wada et al., Appl. Phys. Letter, 54(1), Jan, 2, 1989, "Very High Speed GaInAs . . . Superlattice", pp. 16-17.
Abrokwah et al., J. Vac. Sci. Technol., B4(2), Mar./Apr. 86, "Novel Self-Aligned . . . Transistors", pp. 615-617.
Armiento Craig A.
Choudhury A. N. M. Masum
Elman Boris S.
Jagannath Chirravuri
GTE Laboratories Incorporated
Jackson, Jr. Jerome
Lohmann, III Victor F.
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