Thermally stable semiconductor power device

Details Thermally stable semiconductor power device Thermally stable semiconductor power device

2006-06-30

2008-10-28

Zweizig, Jeffrey S (Department: 2816)

Miscellaneous active electrical nonlinear devices, circuits, and

External effect

Temperature

C327S325000

Reexamination Certificate

active

07443225

ABSTRACT:
A semiconductor power device includes a circuit to provide a gate signal wherein the gate signal has a negative temperature coefficient of gate driving voltage for decreasing a gate driving voltage with an increase temperature whereby the semiconductor power device has a net Ids temperature coefficient that is less than or equal to zero. In an exemplary embodiment, the gate voltage driver includes a diode that has a negative forward voltage temperature coefficient connected between a gate and a source of the semiconductor power device. In another embodiment, the gate voltage is integrated with the semiconductor power device manufactured as part of an integrated circuit with the semiconductor power device.

REFERENCES:
patent: 5635823 (1997-06-01), Murakami et al.
patent: 6091279 (2000-07-01), Hamparian
patent: 6278313 (2001-08-01), Kakuta et al.
patent: 6288597 (2001-09-01), Hasegawa et al.
patent: 6603343 (2003-08-01), Yamaguchi et al.
patent: 6788128 (2004-09-01), Tsuchida
patent: 6888711 (2005-05-01), Kohno
patent: 6978122 (2005-12-01), Kawakyu et al.

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