Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Magnetic field
Reexamination Certificate
2005-01-04
2005-01-04
Elms, Richard (Department: 2824)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Magnetic field
C257S295000, C257S296000, C257S422000
Reexamination Certificate
active
06838740
ABSTRACT:
A method and system for providing a magnetic element capable of being written using spin-transfer effect while being thermally stable and a magnetic memory using the magnetic element are disclosed. The magnetic element includes a first, second and third pinned layers, first and second nonmagnetic layers, a free layer and a nonmagnetic spacer layers. The first, second and third pinned layers are ferromagnetic and have first, second and third magnetizations pinned in first, second and third directions. The first and second nonmagnetic layers include first and second diffusion barriers, respectively. The first and second nonmagnetic layers are between the first and second pinned layers and the second and third pinned layers, respectively. The first and second pinned layers and the second and third pinned layers are antiferromagnetically coupled. The nonmagnetic spacer layer is conductive and resides between the free layer and the third pinned layer. In addition, performance can be further improved by doping Co containing ferromagnetic layers with Cr and/or Pt.
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Huai Yiming
Nguyen Paul P.
Elms Richard
Grandis Inc.
Menz Doug
Sawyer Law Group LLP
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