Thermally stable dense electrically conductive diamond compacts

Details Thermally stable dense electrically conductive diamond compacts Thermally stable dense electrically conductive diamond compacts

1991-10-09

1993-11-30

Bell, Mark L.

Compositions

Electrically conductive or emissive compositions

Elemental carbon containing

51309, 252506, H01B 104

Patent

active

052662365

ABSTRACT:
Broadly, the present invention is directed to a method for making a thermally stable, dense, electrically conductive diamond compact. The method comprises infiltrating a mass of diamond crystals with a silicon infiltrant in the presence of boron under conditions comprising a temperature of not substantially above 1200 .degree. C. and a pressure of not substantially above 45 Kbars. The resulting compact contains diamond-to-diamond bonding. The boron can be provided in the form of boron-doped diamond. Alternatively, a boron-silicon alloy can be used for infiltrating boron-doped or undoped diamond. Further, boron can be added as elemental boron or B.sub.4 C with silicon for infiltration. Alternatively, boron metal catalyst plus silicon infiltration can be used for boron-doped or undoped diamond. Combinations of these techniques also can be used. In the HP/HT process, the silicon infiltrates the diamond powder mass forming a network composed of silicon carbide by reaction of the silicon with diamond-carbon. The reaction leaves a sintered body composed of boron-doped diamond or boron compounds with diamond or a network of silicon carbide and silicon.

REFERENCES:
patent: 3913280 (1975-10-01), Hall
patent: 4167399 (1979-09-01), Lee et al.
patent: 4874398 (1989-10-01), Ringwood
patent: 4907377 (1990-03-01), Csillag et al.
patent: 5030596 (1991-07-01), Kume et al.

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