Thermally stabilized IMPATT oscillator

Details Thermally stabilized IMPATT oscillator Thermally stabilized IMPATT oscillator

1983-02-22

1984-04-24

Grimm, Siegfried H.

Oscillators

Solid state active element oscillator

Significant distributed parameter resonator

331176, H03B 914

Patent

active

044450966

ABSTRACT:
An IMPATT oscillator is thermally stabilized for pulsed operation by utilizing the dissipative heat during subperiods of pulsed operation and a variable self-heating due to a bias voltage applied during non-oscillating subperiods. The oscillator comprises an IMPATT diode mounted on a platform which is attached to a housing defining a resonating cavity. The platform has a thermally insulating base with a layer of thermally and electrically conducting material applied thereon. The thickness of the layer of thermally and electrically conducting material must be sufficient to permit microwave resonances to occur within the cavity. The thermal resistance of the layer is selected to permit the junction temperature to remain constant even for the highest ambient temperature condition. Constant junction temperature over a wide range of ambient temperature produces constant power and frequency characteristics.

REFERENCES:
patent: 3831109 (1974-08-01), Leiby
patent: 3986153 (1976-10-01), Kuno et al.
patent: 4151488 (1979-04-01), Wallace
Ying et al., "Millimeter-Wave Pulsed IMPATT Diode Oscillators", IEEE Journal of Solid State Circuits, vol. SC-11, No. 2, Apr. 1976, pp. 279-285.
Chao et al., "Pulsed IMPATT Diode Oscillators Above 200 GHz"; IEEE International Solid-State Circuits Conference, Feb. 1977, pp. 130-131.

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