Thermally stabilized electrode structure

Details Thermally stabilized electrode structure Thermally stabilized electrode structure

2008-03-25

2011-12-27

Li, Meiya (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

C257S246000, C257S359000, C257S773000, C257SE21001, C257SE21068, C257SE27004, C257SE27071, C257SE45002, C257SE47001, C438S102000, C438S104000, C438S130000, C438S132000, C438S257000, C438S253000, C438S382000, C438S385000, C438S396000, C438S704000, C365S163000, C365S148000

Reexamination Certificate

active

08084842

ABSTRACT:
Memory devices and methods for manufacturing are described herein. A memory device as described herein includes a first electrode layer, a second electrode layer, and a thermal isolation structure including a layer of thermal isolation material between the first and second electrode layers. The first and second electrode layers and the thermal isolation structure define a multi-layer stack having a sidewall. A sidewall conductor layer including a sidewall conductor material is on the sidewall of the multi-layer stack. The sidewall conductor material has an electrical conductivity greater than that of the thermal isolation material. A memory element including memory material is on the second electrode layer.

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