Thermally self-protected power switching semiconductor device

Details Thermally self-protected power switching semiconductor device Thermally self-protected power switching semiconductor device

1979-03-19

1981-02-10

Salce, Patrick R.

Electricity: electrical systems and devices

Safety and protection of systems and devices

Circuit interruption by thermal sensing

307252B, 307310, 307252R, H02H 504

Patent

active

RE0305146

ABSTRACT:
A semiconductor device is disclosed comprising a temperature sensitive thyristor thermally coupled to a power switching thyristor and electrically connected in parallel with the gate of the latter. The temperature sensitive thyristor senses the temperature of the power switching thyristor and automatically responds thereto above a predetermined temperature by shunting the gate current to prevent overheating of the power switching thyristor. The device may additionally include a second temperature sensitive thyristor having a lower switching temperature than the first mentioned thyristor and connected in series with the gate of the power switching thyristor whereby the latter may be triggered into conduction only within a defined temperature range bounded by the switching temperatures of the temperature sensitive thyristors. Normally off and normally on devices are also disclosed.

REFERENCES:
patent: 3564293 (1971-02-01), Mungenast
patent: 3600650 (1971-08-01), Obenhaus
patent: 3622849 (1971-11-01), Kelly, Jr. et al.
patent: 3708720 (1973-01-01), Whitney et al.
patent: 3896369 (1975-07-01), Nakata
patent: 3920955 (1975-11-01), Nakata
patent: 3942075 (1976-03-01), Maran et al.
patent: 3959621 (1976-05-01), Nakata
patent: 3971056 (1976-07-01), Jaskolski et al.
patent: 4009482 (1977-02-01), Nakata
"Analog Integrated Circuit Design", by Alan B. Grebene, Van Nostrand Reinhold Co., 1972, pp. 104-108, sec. 3.5, Pinched Resistors.

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