Thermally protected semiconductor with accurate phase control

Details Thermally protected semiconductor with accurate phase control Thermally protected semiconductor with accurate phase control

1982-09-23

1984-07-03

Moose, Jr., Harry E.

Electricity: electrical systems and devices

Safety and protection of systems and devices

Circuit interruption by thermal sensing

357 28, 357 33, H02H 504

Patent

active

044582870

ABSTRACT:
A power thyristor is provided with a pair of antiseries back to back diode junctions forming an open base transistor thermally coupled to the thyristor and electrically connected between the thyristor gate and cathode. The diode junctions shunt gate current above a given sensed temperature of the power thyristor, for protecting the latter by preventing turn-on thereof. The diode junctions have nonsymmetrical leakage current characteristics to insure protective shunting of forward gate drive in one direction but blocking leakage in the other direction to prevent draining a reverse charged phasing capacitor. The latter is thus charged beginning from the same starting reference point in each cycle whereby to insure accurate phase control in an AC gating system.

REFERENCES:
patent: Re30514 (1981-02-01), Hyink et al.
patent: 3609457 (1971-09-01), Squiers
patent: 3708720 (1973-01-01), Whitney et al.
patent: 4050083 (1977-09-01), Jaskolski et al.

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