Thermally processed, phosphorus- or arsenic-containing semicondu

Details Thermally processed, phosphorus- or arsenic-containing semicondu Thermally processed, phosphorus- or arsenic-containing semicondu

1995-01-04

1998-06-16

Chaudhari, Chandra

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Ordered or disordered

438 94, 438559, H01L 2120

Patent

active

057669813

ABSTRACT:
Methods for defect-free impurity-induced laser disordering (IILD) of AlGaInP and AlGaAs heterostructures. Phosphorus-doped or As-doped films are used in which silicon serves as a diffusion source and silicon nitride acts as a barrier for selective IILD. High-performance, index-guided (AlGa).sub.0.5 In.sub.0.5 P lasers may be fabricated with this technique, analogous to those made in the AlGaAs material system. The deposition of the diffusion source films preferably is carried out in a low pressure reactor. Also disclosed is a scheme for reducing or eliminating phosphorus overpressure during silicon diffusion into III-V semiconducting material by adding a pre-diffusion anneal step. Defects produced during intermixing are also reduced using a GaInP or GaInP/GaAs cap.

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