Thermally optimized interdigitated transistor

Details Thermally optimized interdigitated transistor Thermally optimized interdigitated transistor

1993-01-14

1994-05-10

Mottola, Steven

Amplifiers

With semiconductor amplifying device

Including plural amplifier channels

330307, H03F 314

Patent

active

053111486

ABSTRACT:
A quasi-interdigitated transistor (50) for rf power applications has a plurality of channel regions (102-118) that are each offset from each other in a y-direction such that a q.sub.x heating component from adjacent channel regions will affect any one channel region to a lesser extent that the q.sub.x from adjacent channel regions in the conventional interdigitated structure. In a preferred embodiment, the channel regions (102-118) are formed in a single, curved, V-shaped row such that the cumulative transverse width of all of the transistor sections is less than the waveguide cutoff frequency. The V-shaped row of transistor sections also provides the advantage of parallel signal paths having approximately the same propagation time delay such that there is no phase cancellation within the device.

REFERENCES:
patent: 4429286 (1984-01-01), Nichols et al.

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