Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Junction field effect transistor
Patent
1990-11-01
1993-05-11
Carroll, J.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Junction field effect transistor
257476, 257776, H01L 2980, H01L 2358, H01L 2719, H01L 2348
Patent
active
052105962
ABSTRACT:
A quasi-interdigitated transistor (50) for rf power applications has a plurality of channel regions (102-118) that are each offset from each other in a y-direction such that a q.sub.x heating component from adjacent channel regions will affect any one channel region to a lesser extent that the q.sub.x from adjacent channel regions in the conventional interdigitated structure. In a preferred embodiment, the channel regions (102-118) are formed in a single, curved, V-shaped row such that the cumulative transverse width of all of the transistor sections is less than the waveguide cutoff frequency. The V-shaped row of transistor sections also provides the advantage of parallel signal paths having approximately the same propagation time delay such that there is no phase cancellation within the device.
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patent: 4148046 (1979-04-01), Hendrickson et al.
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patent: 4734751 (1988-03-01), Hwang
Napoli, et al., "High-Power GaAs FET Amplifier-A Multigate Structure", Digest of technical papers of the 1973 IEEE International Solid-State Circuits Conference, Philadelphia, Pa., U.S.A., pp. 14-16 (Feb. 1973).
Carroll J.
Donaldson Richard L.
Grossman Rene E.
Texas Instruments Incorporated
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