Thermally enhanced three-dimensional package and method for...

Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – With provision for cooling the housing or its contents

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C257S712000, C257S686000

Reexamination Certificate

active

11164819

ABSTRACT:
A thermally enhanced three-dimensional (3D) package is disclosed. The package includes a heat sink having an opening and a stiffener ring inside the opening. The stiffener ring has a first surface and a second surface. A first substrate of a first package is disposed inside the opening and secured to the first surface of the stiffener ring. A second substrate of a second chip package is secured to the second surface of the stiffener ring. The first substrate is connected to the second substrate through a plurality of solder balls. The heat generated in the first chip package and the second chip package is dissipated by the heat sink. The first chip package and the second chip package are fixed by the stiffener ring to eliminate warpage of the first chip package and the second chip package, thereby assuring the electrical transmission of the product.

REFERENCES:
patent: 5222014 (1993-06-01), Lin
patent: 5949137 (1999-09-01), Domadia et al.
patent: 6472741 (2002-10-01), Chen et al.
patent: 2004/0080036 (2004-04-01), Chang et al.
patent: 2006/0060963 (2006-03-01), Chang

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Thermally enhanced three-dimensional package and method for... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Thermally enhanced three-dimensional package and method for..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Thermally enhanced three-dimensional package and method for... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3822954

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.