Thermally enhanced electronic package

Details Thermally enhanced electronic package Thermally enhanced electronic package

2008-12-17

2010-10-12

Tran, Thien F (Department: 2895)

Semiconductor device manufacturing: process

Packaging or treatment of packaged semiconductor

Metallic housing or support

C438S123000, C438S124000, C257SE23031

Reexamination Certificate

active

07811862

ABSTRACT:
According to one embodiment, an electronic package includes a semiconductor die, a heat sink and a metallization layer interposed between the semiconductor die and the heat sink. The metallization layer attaches the semiconductor die to the heat sink. The metallization layer has a thickness of about 5 μm or less and a thermal conductivity of about 60 W/m·K or greater.

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De Heus, Rob. “Self Qualification Results: NiPdAu pre-plated leadframes, Green Molding Compound and Green Die-Attach for SSOP16/20/24/28 packages assembled at Subcontractor Amkor Technologies Philippines.” IMO Background Innovation, Divisional Philips Semiconductors, Philips Internal Report No. RNR-83-05/RdH/RdH-2008, QTS Report Database No. 050093, Feb. 1, 2005.

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