Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material
Reexamination Certificate
2008-07-01
2008-07-01
Purvis, Sue A. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Bulk effect device
Bulk effect switching in amorphous material
C257S001000, C257S005000, C257S296000, C257S734000, C257SE31029, C365S103000, C365S163000
Reexamination Certificate
active
07394088
ABSTRACT:
A memory device with improved heat transfer characteristics. The device first includes a dielectric material layer; first and second electrodes, vertically separated and having mutually opposed contact surfaces. A phase change memory element is encased within the dielectric material layer, including a phase-change layer positioned between and in electrical contact with the electrodes, wherein the lateral extent of the phase change layer is less than the lateral extent of the electrodes. An isolation material is positioned between the phase change layer and the dielectric layer, wherein the thermal conductivity of the isolation material is lower than the thermal conductivity of the dielectric material.
REFERENCES:
patent: 3271591 (1966-09-01), Ovshinsky
patent: 3530441 (1970-09-01), Ovshinsky
patent: 4599705 (1986-07-01), Holmberg et al.
patent: 4719594 (1988-01-01), Young et al.
patent: 4876220 (1989-10-01), Mohsen et al.
patent: 4959812 (1990-09-01), Momodomi et al.
patent: 5166096 (1992-11-01), Cote et al.
patent: 5166758 (1992-11-01), Ovshinsky et al.
patent: 5177567 (1993-01-01), Klersy et al.
patent: 5515488 (1996-05-01), Hoppe et al.
patent: 5534712 (1996-07-01), Ovshinsky et al.
patent: 5687112 (1997-11-01), Ovshinsky
patent: 5789277 (1998-08-01), Zahorik et al.
patent: 5789758 (1998-08-01), Reinberg
patent: 5814527 (1998-09-01), Wolstenholme et al.
patent: 5831276 (1998-11-01), Gonzalez et al.
patent: 5837564 (1998-11-01), Sandhu et al.
patent: 5869843 (1999-02-01), Harshfield
patent: 5879955 (1999-03-01), Gonzalez et al.
patent: 5920788 (1999-07-01), Reinberg
patent: 5952671 (1999-09-01), Reinberg et al.
patent: 5958358 (1999-09-01), Tenne et al.
patent: 5970336 (1999-10-01), Wolstenholme et al.
patent: 5985698 (1999-11-01), Gonzalez et al.
patent: 5998244 (1999-12-01), Wolstenholme et al.
patent: 6011725 (2000-01-01), Eitan
patent: 6025220 (2000-02-01), Sandhu
patent: 6031287 (2000-02-01), Harshfield
patent: 6034882 (2000-03-01), Johnson et al.
patent: 6077674 (2000-06-01), Schleifer et al.
patent: 6077729 (2000-06-01), Harshfield
patent: 6087269 (2000-07-01), Williams
patent: 6087674 (2000-07-01), Ovshinsky et al.
patent: 6104038 (2000-08-01), Gonzalez et al.
patent: 6111264 (2000-08-01), Wolstenholme et al.
patent: 6114713 (2000-09-01), Zahorik
patent: 6117720 (2000-09-01), Harshfield
patent: 6147395 (2000-11-01), Gilgen
patent: 6150253 (2000-11-01), Doan et al.
patent: 6153890 (2000-11-01), Wolstenholme et al.
patent: 6177317 (2001-01-01), Huang et al.
patent: 6185122 (2001-02-01), Johnson et al.
patent: 6189582 (2001-02-01), Reinberg et al.
patent: 6236059 (2001-05-01), Wolstenholme et al.
patent: RE37259 (2001-07-01), Ovshinsky
patent: 6271090 (2001-08-01), Huang et al.
patent: 6280684 (2001-08-01), Yamada et al.
patent: 6287887 (2001-09-01), Gilgen
patent: 6314014 (2001-11-01), Lowrey et al.
patent: 6320786 (2001-11-01), Chang et al.
patent: 6339544 (2002-01-01), Chiang et al.
patent: 6351406 (2002-02-01), Johnson et al.
patent: 6420215 (2002-07-01), Knall et al.
patent: 6420216 (2002-07-01), Clevenger et al.
patent: 6420725 (2002-07-01), Harshfield
patent: 6423621 (2002-07-01), Doan et al.
patent: 6429064 (2002-08-01), Wicker
patent: 6462353 (2002-10-01), Gilgen
patent: 6483736 (2002-11-01), Johnson et al.
patent: 6487114 (2002-11-01), Jong et al.
patent: 6501111 (2002-12-01), Lowrey
patent: 6511867 (2003-01-01), Lowrey et al.
patent: 6512241 (2003-01-01), Lai
patent: 6514788 (2003-02-01), Quinn
patent: 6534781 (2003-03-01), Dennison
patent: 6545903 (2003-04-01), Wu
patent: 6555860 (2003-04-01), Lowrey et al.
patent: 6563156 (2003-05-01), Harshfield
patent: 6566700 (2003-05-01), Xu
patent: 6567293 (2003-05-01), Lowrey et al.
patent: 6579760 (2003-06-01), Lung
patent: 6586761 (2003-07-01), Lowrey
patent: 6589714 (2003-07-01), Maimon et al.
patent: 6593176 (2003-07-01), Dennison
patent: 6597009 (2003-07-01), Wicker
patent: 6605527 (2003-08-01), Dennison et al.
patent: 6605821 (2003-08-01), Lee et al.
patent: 6607974 (2003-08-01), Harshfield
patent: 6613604 (2003-09-01), Maimon et al.
patent: 6617192 (2003-09-01), Lowrey et al.
patent: 6621095 (2003-09-01), Chiang et al.
patent: 6627530 (2003-09-01), Li et al.
patent: 6639849 (2003-10-01), Takahashi et al.
patent: 6673700 (2004-01-01), Dennison et al.
patent: 6744088 (2004-06-01), Dennison
patent: 6791102 (2004-09-01), Johnson et al.
patent: 6797979 (2004-09-01), Chiang et al.
patent: 6800504 (2004-10-01), Li et al.
patent: 6800563 (2004-10-01), Xu
patent: 6815704 (2004-11-01), Chen
patent: 6830952 (2004-12-01), Lung et al.
patent: 6850432 (2005-02-01), Lu et al.
patent: 6859389 (2005-02-01), Idehara et al.
patent: 6861267 (2005-03-01), Xu et al.
patent: 6864500 (2005-03-01), Gilton
patent: 6864503 (2005-03-01), Lung
patent: 6867638 (2005-03-01), Saiki et al.
patent: 6888750 (2005-05-01), Walker et al.
patent: 6894305 (2005-05-01), Yi et al.
patent: 6903362 (2005-06-01), Wyeth et al.
patent: 6909107 (2005-06-01), Rodgers et al.
patent: 6927410 (2005-08-01), Chen
patent: 6933516 (2005-08-01), Xu
patent: 6936840 (2005-08-01), Sun et al.
patent: 6937507 (2005-08-01), Chen
patent: 6992932 (2006-01-01), Cohen
patent: 7023009 (2006-04-01), Kostylev et al.
patent: 7033856 (2006-04-01), Lung et al.
patent: 7042001 (2006-05-01), Kim et al.
patent: 7067865 (2006-06-01), Lung et al.
patent: 7132675 (2006-11-01), Gilton
patent: 7166533 (2007-01-01), Happ
patent: 7214958 (2007-05-01), Happ
patent: 7220983 (2007-05-01), Lung
patent: 2004/0051094 (2004-03-01), Ooishi
patent: 2004/0248339 (2004-12-01), Lung
patent: 2005/0029502 (2005-02-01), Hudgens
patent: 2005/0093022 (2005-05-01), Lung
patent: 2005/0201182 (2005-09-01), Osada et al.
patent: 2005/0212024 (2005-09-01), Happ
patent: 2005/0215009 (2005-09-01), Cho
patent: 2006/0108667 (2006-05-01), Lung
patent: 2006/0110878 (2006-05-01), Lung et al.
patent: 2006/0118913 (2006-06-01), Yi et al.
patent: 2006/0175599 (2006-08-01), Happ
patent: 2006/0234138 (2006-10-01), Fehlhaber et al.
patent: 2006/0284157 (2006-12-01), Chen et al.
patent: 2006/0284158 (2006-12-01), Lung et al.
patent: 2006/0284214 (2006-12-01), Chen
patent: 2006/0284279 (2006-12-01), Lung et al.
patent: 2006/0286709 (2006-12-01), Lung et al.
patent: 2006/0286743 (2006-12-01), Lung et al.
patent: 2007/0030721 (2007-02-01), Segal et al.
patent: 2007/0037101 (2007-02-01), Morioka
patent: 2007/0108077 (2007-05-01), Lung et al.
patent: 2007/0108429 (2007-05-01), Lung
patent: 2007/0108430 (2007-05-01), Lung
patent: 2007/0108431 (2007-05-01), Chen et al.
patent: 2007/0109836 (2007-05-01), Lung
patent: 2007/0109843 (2007-05-01), Lung et al.
patent: 2007/0111429 (2007-05-01), Lung
patent: 2007/0115794 (2007-05-01), Lung
patent: 2007/0117315 (2007-05-01), Lai et al.
patent: 2007/0121363 (2007-05-01), Lung
patent: 2007/0121374 (2007-05-01), Lung et al.
patent: 2007/0126040 (2007-06-01), Lung
patent: 2007/0131922 (2007-06-01), Lung
patent: 2007/0131980 (2007-06-01), Lung
patent: 2007/0138458 (2007-06-01), Lung
patent: 2007/0147105 (2007-06-01), Lung et al.
patent: 2007/0154847 (2007-07-01), Chen et al.
patent: 2007/0155172 (2007-07-01), Lai et al.
patent: 2007/0158632 (2007-07-01), Ho
patent: 2007/0158633 (2007-07-01), Lai et al.
patent: 2007/0158645 (2007-07-01), Lung
patent: 2007/0158690 (2007-07-01), Ho et al.
patent: 2007/0158862 (2007-07-01), Lung
patent: 2007/0161186 (2007-07-01), Ho
patent: 2007/0173019 (2007-07-01), Ho et al.
patent: 2007/0173063 (2007-07-01), Lung
patent: 2007/0176261 (2007-08-01), Lung
Memsnet, www.memsnet.org/material/silicondioxidesio2bulk/.
Adler, David, “Amorphous-Semiconductor Devices,” Sci. Amer., vol. 236, pp. 36-48, May 1977.
Adler, D. et al., “Threshold Switching in Chalcogenide-Glass Thin Films,” J. Appl/ Phys 51(6), Jun. 1980, pp. 3289-3309.
Ahn, S.J. et al., “A Highly Manufacturable High Density Phase Change Memory of 64 Mb and Beyond,” IEEE IEDM 2004, pp. 907-910.
Axon Technologies Corporation paper: Technology Description, pp. 1-6.
Bedeschi, F. et al., “4-MB MOSFET-Selected Phase-Change Memory Experimental Chip,” IEEE, 2004, 4 pp
Haynes Beffel & Wolfeld LLP
Macronix International Co. Ltd.
Purvis Sue A.
Wilson Scott R.
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