Thermally contained/insulated phase change memory device and...

Details Thermally contained/insulated phase change memory device and... Thermally contained/insulated phase change memory device and...

2011-04-26

2011-04-26

Pert, Evan (Department: 2826)

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

C438S238000, C438S900000, C257S002000, C257S003000, C257S295000, C257SE31029, C365S100000, C365S148000, C365S163000

Reexamination Certificate

active

07932101

ABSTRACT:
A memory device with improved heat transfer characteristics. The device first includes a dielectric material layer; first and second electrodes, vertically separated and having mutually opposed contact surfaces. A phase change memory element is encased within the dielectric material layer, including a phase-change layer positioned between and in electrical contact with the electrodes, wherein the lateral extent of the phase change layer is less than the lateral extent of the electrodes. An isolation material is positioned between the phase change layer and the dielectric layer, wherein the thermal conductivity of the isolation material is lower than the thermal conductivity of the dielectric material.

REFERENCES:
patent: 3271591 (1966-09-01), Ovshinsky
patent: 3530441 (1970-09-01), Ovshinsky
patent: 4599705 (1986-07-01), Holmberg et al.
patent: 4719594 (1988-01-01), Young et al.
patent: 4876220 (1989-10-01), Mohsen et al.
patent: 4959812 (1990-09-01), Momodomi
patent: 5166096 (1992-11-01), Cote et al.
patent: 5166758 (1992-11-01), Ovshinsky et al.
patent: 5177567 (1993-01-01), Klersy et al.
patent: 5515488 (1996-05-01), Hoppe
patent: 5534712 (1996-07-01), Ovshinsky et al.
patent: 5687112 (1997-11-01), Ovshinsky
patent: 5789277 (1998-08-01), Zahorik et al.
patent: 5789758 (1998-08-01), Reinberg
patent: 5814527 (1998-09-01), Wolstenholme et al.
patent: 5831276 (1998-11-01), Gonzalez et al.
patent: 5837564 (1998-11-01), Sandhu et al.
patent: 5869843 (1999-02-01), Harshfield
patent: 5879955 (1999-03-01), Gonzalez et al.
patent: 5920788 (1999-07-01), Reinberg
patent: 5952671 (1999-09-01), Reinberg et al.
patent: 5958358 (1999-09-01), Tenne
patent: 5970336 (1999-10-01), Wolstenholme et al.
patent: 5985698 (1999-11-01), Gonzalez et al.
patent: 5998244 (1999-12-01), Wolstenholme et al.
patent: 6011725 (2000-01-01), Eitan
patent: 6025220 (2000-02-01), Sandhu
patent: 6031287 (2000-02-01), Harshfield
patent: 6034882 (2000-03-01), Johnson et al.
patent: 6077729 (2000-06-01), Harshfield
patent: 6087269 (2000-07-01), Williams
patent: 6087674 (2000-07-01), Ovshinsky et al.
patent: 6104038 (2000-08-01), Gonzalez et al.
patent: 6111264 (2000-08-01), Wolstenholme et al.
patent: 6114713 (2000-09-01), Zahorik
patent: 6117720 (2000-09-01), Harshfield
patent: 6147395 (2000-11-01), Gilgen
patent: 6150253 (2000-11-01), Doan et al.
patent: 6153890 (2000-11-01), Wolstenholme et al.
patent: 6177317 (2001-01-01), Huang et al.
patent: 6185122 (2001-02-01), Johnson et al.
patent: 6189582 (2001-02-01), Reinberg et al.
patent: 6236059 (2001-05-01), Wolstenholme et al.
patent: RE37259 (2001-07-01), Ovshinsky
patent: 6271090 (2001-08-01), Huang et al.
patent: 6280684 (2001-08-01), Yamada et al.
patent: 6287887 (2001-09-01), Gilgen
patent: 6314014 (2001-11-01), Lowrey et al.
patent: 6320786 (2001-11-01), Chang et al.
patent: 6339544 (2002-01-01), Chiang et al.
patent: 6351406 (2002-02-01), Johnson et al.
patent: 6420215 (2002-07-01), Knall et al.
patent: 6420216 (2002-07-01), Clevenger et al.
patent: 6423621 (2002-07-01), Doan et al.
patent: 6429064 (2002-08-01), Wicker
patent: 6462353 (2002-10-01), Gilgen
patent: 6483736 (2002-11-01), Johnson et al.
patent: 6487114 (2002-11-01), Jong et al.
patent: 6501111 (2002-12-01), Lowrey
patent: 6511867 (2003-01-01), Lowrey et al.
patent: 6512241 (2003-01-01), Lai
patent: 6514788 (2003-02-01), Quinn
patent: 6534781 (2003-03-01), Dennison
patent: 6545903 (2003-04-01), Wu
patent: 6548394 (2003-04-01), Peng et al.
patent: 6555860 (2003-04-01), Lowrey et al.
patent: 6563156 (2003-05-01), Harshfield
patent: 6566700 (2003-05-01), Xu
patent: 6567293 (2003-05-01), Lowrey et al.
patent: 6579760 (2003-06-01), Lung
patent: 6586761 (2003-07-01), Lowrey
patent: 6589714 (2003-07-01), Maimon et al.
patent: 6593176 (2003-07-01), Dennison
patent: 6597009 (2003-07-01), Wicker
patent: 6605527 (2003-08-01), Dennison et al.
patent: 6605821 (2003-08-01), Lee et al.
patent: 6607974 (2003-08-01), Harshfield
patent: 6613604 (2003-09-01), Maimon et al.
patent: 6617192 (2003-09-01), Lowrey et al.
patent: 6621095 (2003-09-01), Chiang et al.
patent: 6627530 (2003-09-01), Li et al.
patent: 6639849 (2003-10-01), Takahashi et al.
patent: 6673700 (2004-01-01), Dennison et al.
patent: 6744088 (2004-06-01), Dennison
patent: 6791102 (2004-09-01), Johnson et al.
patent: 6797979 (2004-09-01), Chiang et al.
patent: 6800504 (2004-10-01), Li
patent: 6800563 (2004-10-01), Xu
patent: 6815704 (2004-11-01), Chen
patent: 6830952 (2004-12-01), Lung
patent: 6850432 (2005-02-01), Lu
patent: 6859389 (2005-02-01), Idehara
patent: 6861267 (2005-03-01), Xu et al.
patent: 6864500 (2005-03-01), Gilton
patent: 6864503 (2005-03-01), Lung
patent: 6867638 (2005-03-01), Saiki et al.
patent: 6888750 (2005-05-01), Walker et al.
patent: 6894305 (2005-05-01), Yi et al.
patent: 6897467 (2005-05-01), Doan et al.
patent: 6903362 (2005-06-01), Wyeth et al.
patent: 6909107 (2005-06-01), Rodgers et al.
patent: 6927410 (2005-08-01), Chen
patent: 6933516 (2005-08-01), Xu
patent: 6936840 (2005-08-01), Sun et al.
patent: 6937507 (2005-08-01), Chen
patent: 6992932 (2006-01-01), Cohen
patent: 7023009 (2006-04-01), Kostylev et al.
patent: 7033856 (2006-04-01), Lung
patent: 7042001 (2006-05-01), Kim et al.
patent: 7067865 (2006-06-01), Lung
patent: 7126149 (2006-10-01), Iwasaki
patent: 7132675 (2006-11-01), Gilton
patent: 7166533 (2007-01-01), Happ
patent: 7214958 (2007-05-01), Happ
patent: 7220983 (2007-05-01), Lung
patent: 7238994 (2007-07-01), Chen
patent: 7321130 (2008-01-01), Lung
patent: 7485891 (2009-02-01), Hamann et al.
patent: 2002/0017701 (2002-02-01), Klersy et al.
patent: 2004/0051094 (2004-03-01), Ooishi
patent: 2005/0006681 (2005-01-01), Okuno
patent: 2005/0029502 (2005-02-01), Hudgens
patent: 2005/0093022 (2005-05-01), Lung
patent: 2005/0127347 (2005-06-01), Choi et al.
patent: 2005/0201182 (2005-09-01), Osada
patent: 2005/0212024 (2005-09-01), Happ
patent: 2005/0215009 (2005-09-01), Cho
patent: 2006/0108667 (2006-05-01), Lung
patent: 2006/0110878 (2006-05-01), Lung
patent: 2006/0118913 (2006-06-01), Yi et al.
patent: 2006/0234138 (2006-10-01), Fehlhaber
patent: 2006/0286709 (2006-12-01), Lung
patent: 2007/0037101 (2007-02-01), Morioka
patent: 2007/0045606 (2007-03-01), Magistretti et al.
patent: 2007/0108429 (2007-05-01), Lung
patent: 2007/0111429 (2007-05-01), Lung
patent: 2007/0138458 (2007-06-01), Lung
patent: 2009/0078926 (2009-03-01), Lee
patent: 518719 (2003-01-01), None
patent: WO 00/45108 (2000-08-01), None
patent: WO 00/79539 (2000-12-01), None
patent: WO-0108213 (2001-02-01), None
patent: WO-2006084856 (2006-08-01), None
Adler, David, “Amorphous-Semiconductor Devices,” Sci. Amer., vol. 236, pp. 36-48, May 1977.
Adler, D. et al., “Threshold Switching in Chalcogenide-Glass Thin Films,” J. Appl/ Phys 51(6), Jun. 1980, pp. 3289-3309.
Ahn, S.J. et al., “A Highly Manufacturable High Density Phase Change Memory of 64 Mb and Beyond,” IEEE IEDM 2004, pp. 907-910.
Axon Technologies Corporation paper: Technology Description, pp. 1-6.
Bedeschi, F. et al., “4-MB MOSFET-Selected Phase-Change Memory Experimental Chip,” IEEE, 2004, 4 pp.
Blake thesis, “Investigation of GeTeSb5 Chalcogenide Films for Use as an Analog Memory,” AFIT/GE/ENG/00M-04, Mar. 2000, 121 pages.
Chen, An et al., “Non-Volatile Resistive Switching for Advanced Memory Applications,” IEEE IEDM , Dec. 5-7, 2005, 4 pages.
Cho, S. L. et al., “Highly Scalable On-axis Confined Cell Structure for High Density PRAM beyond 256Mb,” 2005 Symposium on VLSI Technology Digest of Technical Papers, pp. 96-97.
Gibson, G. A. et al, “Phase-change Recording Medium that Enables Ultrahigh-density Electron-beam Data Storage,” Applied Physics Letter, 2005, 3 pp., vol. 86.
Gill, Manzur et al., “A High-Performance Nonvolatile Memory Technology for Stand-Alone Memory and Embedded Applications,” 2002 IEEE-ISSCC Technical Digest (TD 12.4), 7 pp.
Ha, Y. H. et al., “An Edge Contact Type Cell fro Phase Change RAM Featuring Very Low Power Consumption,” 2003 Sympo

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