Thermally conductive integrated circuit package with radio frequ

Details Thermally conductive integrated circuit package with radio frequ Thermally conductive integrated circuit package with radio frequ

1993-02-04

1994-12-06

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

With shielding

257778, 257786, 257787, 257792, 257795, 257796, H01L 4900, H01L 2328, H01L 2348, H01L 2940

Patent

active

053714040

ABSTRACT:
A semiconductor device package comprises a substrate (10), a flip-chip (16), an underfill adhesive (25), and a thermally and electrically conductive plastic material (20). A leadless circuit carrying substrate has a metallization pattern (13) on a first side (15), one portion of the metallization pattern being a circuit ground (17). The second side has an array of surface mount solder pads (24) electrically connected to the metallization pattern by means of at least one conductive via (26) through the substrate. A semiconductor device (16) is flip-chip mounted to the metallization pattern by means of metal bumps (22). An underfill adhesive (25) fills the gap between the semiconductor device and the substrate. A thermally and electrically conductive plastic material (20) containing metal particles is transfer molded to encapsulate the semiconductor device, the underfill adhesive, and a portion of the first side of the leadless circuit carrying substrate, forming a cover. The conductive plastic material is electrically connected to the circuit ground to shield the semiconductor device from radio frequency energy, and is mechanically attached to the semiconductor device to dissipate heat. Fins (28) may be molded into the conductive plastic material to further enhance the ability to dissipate heat.

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patent: 5175613 (1992-12-01), Barker, III et al.
patent: 5218234 (1993-06-01), Thompson et al.

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