Thermally ballasted semiconductor device

Details Thermally ballasted semiconductor device Thermally ballasted semiconductor device

1976-04-29

1977-07-12

Lynch, Michael J.

357 46, 357 51, H01L 2710

Patent

active

040358275

ABSTRACT:
A semiconductor device comprising a plurality of cells is disclosed. Each cell contains at least one bi-polar transistor and a diode serially connected to the base of the transistor therein. Each cell is connected in parallel relation with each other cell. The diode in each cell is located in close proximity to the transistor therein so that the thermal gradient therebetween is small.

REFERENCES:
patent: 3440715 (1969-04-01), Seng
patent: 3461357 (1969-08-01), Mutter et al.
patent: 3510735 (1970-05-01), Patter
patent: 3544860 (1970-12-01), Lichowsky
patent: 3694705 (1972-09-01), Wenzig
H. Wolf, Semiconductors, Wiley-Interscience, 1971, pp. 310-312.

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