1974-08-26
1976-10-26
Wojciechowicz, Edward J.
357 55, 357 88, H01L 2972, H01L 2906
Patent
active
039887596
ABSTRACT:
Regions of high resistivity, with respect to the surrounding material, are designed into a semiconductor device at points where hot-spots have been observed. A device made in this manner has very good second breakdown characteristics. One application is in large area junction transistors having an interdigitated base-emitter configuration.
REFERENCES:
patent: 3500143 (1970-03-01), Lamming
patent: 3667008 (1972-05-01), Katnack
patent: 3740621 (1973-06-01), Carley
Denning Richard
Einthoven Willem Gerard
Christoffersen H.
Hays R. A.
RCA Corporation
Williams R. P.
Wojciechowicz Edward J.
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