Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Patent
1997-02-25
1998-12-22
Thomas, Tom
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
257222, 257225, 257226, 257229, 257444, 257440, 257446, H01L 31058
Patent
active
058523219
ABSTRACT:
A thermal type infrared radiation solid state image pick-up device includes a temperature-electrical signal converting function element and a heat isolation structural body supporting the temperature-electrical signal converting function element. The heat isolation structural body is formed of a silicon oxide or a silicon nitride in porous structure. Since the heat isolation structural body has porous structure, heat flowing out from the heat isolation structural body depends on an actual area derived by subtracting the area of the holes from the area of the cross-section of the leg (nominal cross section). On the other hand, the mechanical strength of the heat isolation structural body relies on the area of the cross section of the leg. Therefore, for obtaining the photo sensitivity equivalent to that of the conventional heat isolation structural body, the cross sectional area of the leg can be made greater to improve mechanical strength thereof.
REFERENCES:
patent: 5656848 (1997-08-01), Beratan et al.
R. A. Wood., "High-Performance Infrared Thermal Imaging with Monolithic Silicom Focal Planes Operating at Room Temperature", IEEE, (1993), pp. 8.1.1-8.1.3.
Abraham Fetsum
NEC Corporation
Thomas Tom
LandOfFree
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