Thermal-type infrared detection element

Details Thermal-type infrared detection element Thermal-type infrared detection element

2006-02-17

2008-08-26

Porta, David P. (Department: 2884)

Radiant energy

Invisible radiant energy responsive electric signalling

Infrared responsive

Reexamination Certificate

active

07417229

ABSTRACT:
An infrared absorption film (first through third infrared absorption films) that constitutes a photoreceptor of a thermal-type infrared detection element comprises a laminate film in which a film composed of a novel SiCO material having high absorption on the short-wavelength end (approximately 8 to 10 μm) of the waveband (atmospheric window) from 8 to 14 μm is combined with a film composed of SiO, SiN, SiC, SiON, SiCN, or another material having high absorption on the long-wavelength end (approximately 10 to 14 μm) of the abovementioned waveband. Infrared rays on the short-wavelength end that could not be effectively utilized by the conventional thermal infrared detection element can thereby be absorbed by the SiCO membrane, infrared rays throughout the abovementioned waveband can be effectively utilized, and the sensitivity of the thermal infrared detection element can be enhanced.

REFERENCES:
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patent: 5021663 (1991-06-01), Hornbeck
patent: 2001-99705 (2001-04-01), None
patent: 2001-255203 (2001-09-01), None
patent: 2002-071452 (2002-03-01), None
patent: 2003-106895 (2003-04-01), None
Japanese Office Action dated Nov. 28, 2007, with partial English translation.
Journal of the Electrochemical Society, “Physical and Barrier Properties of PECVD Amorphous Silicon-Oxycarbide from Trimethylsilane anc CO2” vol. 151, No. 10 (2004) G704-G708.
Japanese Office Action date May 13, 2008, with partial English translation.
Proceedings of the 67thSymposium on Semiconductors and Integrated Circuits Technology, Electronic Materials Committee, Electrochemical Society of Japan, “Characterization of Ashing Damage in porous Low-k Dielectric Films ”Dec. 9, 2004, pp. 30-33.

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